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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 2,6-Diphenylanthracene
2,6-Diphenylanthracene (purified by sublimation)
2,6-Diphenylanthracene
CAS RN: 95950-70-2
Product Number: D5152
Performance of 2,6-Diphenylanthracene [D5152]-based OFETs
![Fabrication method and evaluation of vacuum-deposited [D5152]-based OFETs](/assets/cms-images/D5152-device-method-structure-en.png)
Table.OFETs Characteristics of 2,6-Diphenylanthracene [D5152]-based OFETs
| Entry | Fabrication Method | Device Configuration | SAM Treatment | Tsub (°C) | Polarity | μ (cm2 V−1 s−1) | Vth (V) | Ion/Ioff |
|---|---|---|---|---|---|---|---|---|
| Entry1 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM Treatmentw/o Bare |
Tsub (°C)50 | Polarityp | μ (cm2 V−1 s−1)0.34 | Vth (V)‒12 | Ion/Ioff106 |
Figure. Transfer curves in the saturated region and output curves at different gate voltage
Experimental details
brication and evaluatio n of vacuum-deposited 2,6-Diphenylanthracene[D5152]
< Substrate >
< Vacuum Deposition >
< Device Configuration >
< Evaluation Condition >
< Substrate >
- Bare Si/SiO2 (thickness of SiO2200 nm)
< Vacuum Deposition >
- Deposition rate of 2,6-Diphenylanthracene [D5152] 0.3 Å/s, (under a pressure of -10−4 Pa)
- Substrate temperature during deposition: 50 °C
- Deposition rate of Au: 1.0 Å/s, (under a pressure of∼10 ∼10−4 Pa)
< Device Configuration >
- [n+-Si/SiO2 (200 nm) / 2,6-Diphenylanthracene [D5152](50 nm) / Au (40 nm)]
- Top-Contact Bottom-Gate Type (TCBG)
- Channel Length: 50 μm
- Channel width: 1.5 mm
< Evaluation Condition >
- Under N2
- Field-effect mobilities (μ)) were determined from the transfer curves in the saturation regime using the following equation:
ID = (W/2L) μ Ci (VG − Vth)2