Purification via sublimation and Comparison of FET performances: Pentacene [P2524]
(* The mobility refers to device evaluation measurements obtained within our facility under specific environment condition.)
For more information about an FET device modification using OTS treatment (Mobility: 1.52cm2/Vs), please refer to the FET evaluation page.
Fabrication and evaluation of Pentacene OFET devices.
The field-effect mobility of each various grades of pentacene were measured using top-contact thin-film field-effect transistors geometry (Figure 1). A thin film of pentacene as the active layer (60 nm) was vacuum-deposited onto Si/SiO2 substrates (bare) at room temperature (Tsub = RT). The drain and source electrodes (40 nm) were then prepared by gold evaporation through a shadow mask on top of the pentacene films; the drain-source channel length (L) and width (w) are 50 μm and 1.5 mm, respectively. The characteristics of the OFET devices were measured under nitrogen atmosphere.
Figure 1. Illustration of the device structure of pentacene-based OFET device.
The FET performances of our various pentacene grades are summarized in Figure 2 and Table 1. P2524 (high-purity Pentacene 99.999%, trace metals basis) showed a large increase OFET performance with the highest hole mobility of 0.39 cm2/Vs. In comparison to other companies’ sublimed pentacene samples, P2524 possesses the highest drain current and the best OFET potential (Figure 3 and Table 2).
Figure 2. Transfer curves of various grades of pentacene.
Figure 3. Transfer curves of OFET devices using several companies pentacene.
We have successfully captured the excellent electrical properties and stable mobility of P2524 Pentacene (99.999%, trace metals basis) (purified by sublimation) through our transistor evaluation process.