CAS RN: 1398395-83-9 | Product Number: D5491
2-Decyl-7-phenylbenzothieno[3,2-b]benzothiophene [for organic electronics]
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|Purity / Analysis Method||>99.5%(HPLC)|
|Molecular Formula / Molecular Weight||C__3__0H__3__2S__2 = 456.71|
|Physical State (20 deg.C)||Solid|
|Condition to Avoid||Light Sensitive|
|Reaxys Registry Number||28465162|
|Appearance||White to Light yellow powder to crystal|
|Purity(HPLC)||min. 99.5 area%|
|Hole Mobility(mu FET)||min. 10.0 cm2/Vs(ODTS Si/SiO2 substrate)|
|Melting Point||225 °C|
|HOMO Level||-5.7 eV|
Organic Field-Effect Transistor (OFET)
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.
(a) w/o annealing (bare) (b) annealing 120 °C, 5min (bare)
(c) w/o annealing (ODTS) (d) annealing 120 °C, 5min (ODTS)
Table 1. OFET characteristics of the Ph-BTBT-10-based devices
- Liquid crystals for organic thin-film transistors
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