Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 2,6-Diphenylanthracene

brication and evaluatio n of vacuum-deposited 2,6-Diphenylanthracene[D5152]

< Substrate >

• Bare Si/SiO₂ (thickness of SiO₂200 nm)

< Vacuum Deposition >

• Deposition rate of 2,6-Diphenylanthracene [D5152] 0.3 Å/s, (under a pressure of -10⁻⁴ Pa)
• Substrate temperature during deposition: 50 °C
• Deposition rate of Au: 1.0 Å/s, (under a pressure of∼10 ∼10⁻⁴ Pa)

< Device Configuration >

• [n⁺-Si/SiO₂ (200 nm) / 2,6-Diphenylanthracene [D5152](50 nm) / Au (40 nm)]
• Top-Contact Bottom-Gate Type (TCBG)
• Channel Length: 50 μm
• Channel width: 1.5 mm

< Evaluation Condition >

• Under N₂
• Field-effect mobilities (μ)) were determined from the transfer curves in the saturation regime using the following equation:
  I_D = (W/2L) μ Ci (V_G − V_th)²