CAS RN: 1398395-83-9 | Product Number: D5491
|Size||Unit Price||Same Day||2-3 Business Days|
|Purity / Analysis Method||>99.5%(HPLC)|
|Molecular Formula / Molecular Weight||C__3__0H__3__2S__2 = 456.71|
|Physical State (20 deg.C)||Solid|
|Condition to Avoid||Light Sensitive|
|Reaxys Registry Number||28465162|
|Appearance||White to Light yellow powder to crystal|
|Purity(HPLC)||min. 99.5 area%|
|Hole Mobility(mu FET)||min. 10.0 cm2/Vs(ODTS Si/SiO2 substrate)|
|Melting Point||225 °C|
|HOMO Level||-5.7 eV|
Organic Field-Effect Transistor (OFET)
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.
(a) w/o annealing (bare) (b) annealing 120 °C, 5min (bare)
(c) w/o annealing (ODTS) (d) annealing 120 °C, 5min (ODTS)
Table 1. OFET characteristics of the Ph-BTBT-10-based devices
- Liquid crystals for organic thin-film transistors
Safety Data Sheet (SDS) Search
The requested SDS is not available.
Please check that the Product Number you have entered is correct.
If your information is correct and you are still not able to view the requested SDS, please Contact Us for more information.