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CAS RN: 1398395-83-9 | Product Number: D5491


Purity: >99.5%(HPLC)
  • Ph-BTBT-C10
  • 2-Decyl-7-phenylbenzo[b]benzo[4,5]thieno[2,3-d]thiophene
  • Ph-BTBT-10
17   11  
19   2  

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[Solubility (Reference data)]
Toluene: 3.5 mmol/L
Anisole: 2.9 mmol/L
Chlorobenezene: 4.9 mmol/L

For more information, please refer to the FET evaluation page, the tab [Application] below, or a leaflet.

Product Number D5491
Purity / Analysis Method >99.5%(HPLC)
Molecular Formula / Molecular Weight C__3__0H__3__2S__2 = 456.71  
Physical State (20 deg.C) Solid
Condition to Avoid Light Sensitive
CAS RN 1398395-83-9
Reaxys Registry Number 28465162
Appearance White to Light yellow powder to crystal
Purity(HPLC) min. 99.5 area%
Hole Mobility(mu FET) min. 10.0 cm2/Vs(ODTS Si/SiO2 substrate)
Properties (reference)
Melting Point 225 °C
HOMO Level -5.7 eV
Related Laws:
Transport Information:
Organic Field-Effect Transistor (OFET)

Organic Field-Effect Transistor (OFET)

The field-effect mobility of Ph-BTBT-10 was measured using the top-contact thin-film field-effect transistors geometry (Figure 1). The thin film of Ph-BTBT-10 as the active layer (40 nm) was vacuum-deposited onto Si/SiO2 substrate (bare) or ODTS (octadecyl trichlorosilane [O0079])-treated Si/SiO2 substrate while heating the substrate. The drain and source electrodes (40 nm) then were prepared by gold evaporation through a shadow mask on top of the Ph-BTBT-10 film; the drain-source channel length (L) and width (w) are 50 µm and 1.5 mm, respectively. After deposition, these devices are thermal annealed at Tsub = 120 °C for 5 min under the ambient conditions, and the characteristics of the OFET devices were measured.

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs
The performances of the OFET devices are summarized in Table 1 and Figure 2. All Ph-BTBT-10-based devices exhibited pure typical p-channel field-effect transistor (FET) characteristics. The FET mobilities were quite dependent on the thermal annealing treatment regardless of the self-assemble-monolayer (SAM) (Figure 2). This would be attributed to the phase transition from a monolayer to a bilayer crystal structure in the thin-film form.
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices
(a) w/o annealing (bare)  (b) annealing 120 °C, 5min (bare)
(c) w/o annealing (ODTS)  (d) annealing 120 °C, 5min (ODTS)

Table 1. OFET characteristics of the Ph-BTBT-10-based devices

Table 1. OFET characteristics of the Ph-BTBT-10-based devices


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