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CAS RN: 1398395-83-9 | 产品编码: D5491

2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene [for organic electronics]


纯度/分析方法: >99.5%(HPLC)
别名:
  • 2-癸基-7-苯基[1]苯并噻吩并[3,2-b][1]苯并噻吩 [用于有机电子]
  • 2-癸基-7-苯基苯并[b]苯并[4,5]噻吩并[2,3-d]噻吩
  • Ph-BTBT-C10
  • 2-Decyl-7-phenylbenzo[b]benzo[4,5]thieno[2,3-d]thiophene
  • Ph-BTBT-10
产品文档:
100MG
S$238.50
2   6   下单后约2周内可以发货
250MG
S$450.00
37   ≥100  请联系我们
1G
S$1,350.00
17   ≥80  请联系我们

* 订购TCI产品,请联系我们的经销商或 联系我们。
* TCI会时常优化储存条件,敬请留意。


补充产品信息:

[Solubility (Reference data)]
Toluene: 3.5 mmol/L
Anisole: 2.9 mmol/L
Chlorobenezene: 4.9 mmol/L

For more information, please refer to the FET evaluation page, the tab [Application] below, or a leaflet.

产品编码 D5491
纯度/分析方法 >99.5%(HPLC)
分子式/分子量 C__3__0H__3__2S__2 = 456.71 
外观与形状(20°C) 固体
储存温度 室温 (15°C以下阴凉干燥处)
应避免的情况
包装和容器 100MG-Glass Bottle with Plastic Insert (查看图片),  1G-Glass Bottle with Plastic Insert (查看图片),  250MG-Glass Bottle with Plastic Insert (查看图片)
CAS RN 1398395-83-9
Reaxys-RN 28465162
PubChem物质ID 468591369
技术规格
Appearance White to Light yellow powder to crystal
Purity(HPLC) min. 99.5 area%
Hole Mobility(mu FET) min. 10.0 cm2/Vs(ODTS Si/SiO2 substrate)
物性(参考值)
熔点 225 °C
HOMO能级 -5.7 eV
GHS
相关法规
运输信息
HS编码* 2934.99-000
*此H.S.编码用于日本出口报关,不适用于您所在国家或地区的进口申报
应用
Organic Field-Effect Transistor (OFET)

Organic Field-Effect Transistor (OFET)

The field-effect mobility of Ph-BTBT-10 was measured using the top-contact thin-film field-effect transistors geometry (Figure 1). The thin film of Ph-BTBT-10 as the active layer (40 nm) was vacuum-deposited onto Si/SiO2 substrate (bare) or ODTS (octadecyl trichlorosilane [O0079])-treated Si/SiO2 substrate while heating the substrate. The drain and source electrodes (40 nm) then were prepared by gold evaporation through a shadow mask on top of the Ph-BTBT-10 film; the drain-source channel length (L) and width (w) are 50 µm and 1.5 mm, respectively. After deposition, these devices are thermal annealed at Tsub = 120 °C for 5 min under the ambient conditions, and the characteristics of the OFET devices were measured.

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs
The performances of the OFET devices are summarized in Table 1 and Figure 2. All Ph-BTBT-10-based devices exhibited pure typical p-channel field-effect transistor (FET) characteristics. The FET mobilities were quite dependent on the thermal annealing treatment regardless of the self-assemble-monolayer (SAM) (Figure 2). This would be attributed to the phase transition from a monolayer to a bilayer crystal structure in the thin-film form.
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices
(a) w/o annealing (bare)  (b) annealing 120 °C, 5min (bare)
(c) w/o annealing (ODTS)  (d) annealing 120 °C, 5min (ODTS)


Table 1. OFET characteristics of the Ph-BTBT-10-based devices

Table 1. OFET characteristics of the Ph-BTBT-10-based devices

References


产品文档 (部分产品的分析图谱无法提供,敬请谅解。)
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技术规格
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