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CAS RN: 1398395-83-9 | 产品编码: D5491
2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene [for organic electronics]
![2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene [for organic electronics] Chemical Structure of 2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene [for organic electronics]](/medias/D5491.jpg?context=bWFzdGVyfHJvb3R8Mzk5NjF8aW1hZ2UvanBlZ3xhREZsTDJoaE5TODRPVEl4TkRnM09UQXdOekF5TDBRMU5Ea3hMbXB3Wnd8YzkzNzliNWJkOTNlZTE0OTg5ZDliZDYyNjgzMjFkYmE1OTNhMzFiZjAxNDgyYTAzZjg0ODJmYjZiODIyM2FmYw)
补充产品信息:
[Solubility (Reference data)]
Toluene: 3.5 mmol/L
Anisole: 2.9 mmol/L
Chlorobenezene: 4.9 mmol/L
For more information, please refer to the FET evaluation page, the tab [Application] below, or a leaflet.
产品编码 | D5491 |
纯度/分析方法 ![]() |
>99.5%(HPLC) |
分子式/分子量 | C__3__0H__3__2S__2 = 456.71 |
外观与形状(20°C) | 固体 |
储存温度 ![]() |
室温 (15°C以下阴凉干燥处) |
应避免的情况 | 光 |
包装和容器 ![]() |
100MG-Glass Bottle with Plastic Insert (查看图片), 1G-Glass Bottle with Plastic Insert (查看图片), 250MG-Glass Bottle with Plastic Insert (查看图片) |
CAS RN | 1398395-83-9 |
Reaxys-RN | 28465162 |
PubChem物质ID | 468591369 |
技术规格
Appearance | White to Light yellow powder to crystal |
Purity(HPLC) | min. 99.5 area% |
Hole Mobility(mu FET) | min. 10.0 cm2/Vs(ODTS Si/SiO2 substrate) |
物性(参考值)
熔点 | 225 °C |
HOMO能级 | -5.7 eV |
GHS
相关法规
运输信息
HS编码* | 2934.99-000 |
应用
Organic Field-Effect Transistor (OFET)
Organic Field-Effect Transistor (OFET)
The field-effect mobility of Ph-BTBT-10 was measured using the top-contact thin-film field-effect transistors geometry (Figure 1). The thin film of Ph-BTBT-10 as the active layer (40 nm) was vacuum-deposited onto Si/SiO2 substrate (bare) or ODTS (octadecyl trichlorosilane [O0079])-treated Si/SiO2 substrate while heating the substrate. The drain and source electrodes (40 nm) then were prepared by gold evaporation through a shadow mask on top of the Ph-BTBT-10 film; the drain-source channel length (L) and width (w) are 50 µm and 1.5 mm, respectively. After deposition, these devices are thermal annealed at Tsub = 120 °C for 5 min under the ambient conditions, and the characteristics of the OFET devices were measured.
The performances of the OFET devices are summarized in Table 1 and Figure 2. All Ph-BTBT-10-based devices exhibited pure typical p-channel field-effect transistor (FET) characteristics. The FET mobilities were quite dependent on the thermal annealing treatment regardless of the self-assemble-monolayer (SAM) (Figure 2). This would be attributed to the phase transition from a monolayer to a bilayer crystal structure in the thin-film form.
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.
(a) w/o annealing (bare) (b) annealing 120 °C, 5min (bare)
(c) w/o annealing (ODTS) (d) annealing 120 °C, 5min (ODTS)
Table 1. OFET characteristics of the Ph-BTBT-10-based devices
References
- Liquid crystals for organic thin-film transistors
技术文章
[TCIMAIL No.178] High-performance Liquid Crystalline Semiconductor Material: Ph-BTBT-10[Organic Transistor] A ultra-high performance p-type semiconductor material "Ph-BTBT-10"
[Organic Transistor] Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Ph-BTBT-10
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