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CAS RN: 135-48-8 | 产品编码: P2524
Pentacene (99.999%, trace metals basis) (purified by sublimation) [for organic electronics]
![Chemical Structure of Pentacene (99.999%, trace metals basis) (purified by sublimation) [for organic electronics]](/medias/P2524.jpg?context=bWFzdGVyfHJvb3R8NDU3OTN8aW1hZ2UvanBlZ3xhREZpTDJoa09DODRPVEl6TVRBNE5EYzBPVEV3TDFBeU5USTBMbXB3Wnd8MzRlZGI3OTdkMTczNmY5ODUwNGY4ZGUzOTU0MmIxNmEwNmFiN2Q5Mjg4NmZiMmU4OTNkNTgzZjU3NjgxMWMxMg "Pentacene (99.999%, trace metals basis) (purified by sublimation) [for organic electronics]")
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![Pentacene (99.999%, trace metals basis) (purified by sublimation) [for organic electronics]](/_ui/responsive/theme-tci/images/missing_product_zoom.webp "Pentacene (99.999%, trace metals basis) (purified by sublimation) [for organic electronics]")
补充产品信息:
This product is a substitute of Pentacene (purified by sublimation) (Product Number：P0030).
For more information, please refer to the FET evaluation page, the tab [application] below, or a leaflet.
We have demonstrated the fabrication and evaluation of OFET devices by using "Pentacene" (Product Number：P2524) sublimed grade. The device showed good performance with a hole carrier mobility of "μFET: >0.35 cm2/Vs (bare Si/SiO2 substrate)".
<< Device configuration and evaluation method >>
· Device configuration: top-contact type
[Sin++ / SiO2 (200 nm) / P2524 (60 nm) / Au (60 nm)]
· Substrate treatment (Self-Assembled Monolayer): none
· Device fabrication: vacuum vapor deposition method
(Channel L = 50 μm , W = 1.5 mm)
· Evaluation condition: nitrogen atmosphere
· Mobility(μFET): calculated from the transfer curves in the saturation regime using the following equation
ID = (WCi /2L)μFET(VG - VTh)2
The difference between P2524 and P0030 is the following.
Product Number P2524 (This product): Pentacene (99.999%, trace metals basis) (purified by sublimation)
[Specification]
Total Metals Impurities: max. 10.0 ppm
Electron Mobility(μFET): min. 0.35 cm2/Vs (bare Si/SiO2 substrate)
Product Number P0030 : Pentacene (purified by sublimation)
[Specification]
TOF-MS: to pass test
技术规格
| Appearance | Gray to Dark purple to Black powder to crystal |
| Total Metals Impurities | max. 10.0 ppm |
| Hole Mobility(mu FET) | min. 0.35 cm2/Vs(bare Si/SiO2 substrate) |
物性（参考值）
| 最大吸收波长 | 577 nm (Toluene) |
| 水溶性 | 不溶 |
| HOMO能级 | -4.9 eV |
GHS
相关法规
运输信息
| HS编码* | 2902.90-000 |
应用
Organic Field-Effect Transistor (OFET)
The FET performance was significantly improved by Self-Assembled Monolayer (n-Octyltrichlorosilane (OTS)[O0168]); the OTS-treated device demonstrated the highest performance with a hole carrier mobility of 1.52 cm2/Vs and an on/off ratio of 1.5 ×107 (Figure 1).
In the bare device (without SAM), two weak peaks assignable to face-on orientation were observed (Figure 3b, black arrow), which would create the disadvantage of carrier passes parallel to the substrate (Figure 4a). On the other hand, such peaks were not observed in the pentacene film on the OTS-treated substrate (Figure 3b). It is one reason why the mobility was higher in the OTS-treated OFET device.
A part of X-ray diffraction (XRD: Smart Lab) was conducted at Advanced Characterization Nanotechnology Platform of the University of Tokyo, supported by "Nanotechnology Platform" of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
PubMed Literature
文档
技术文章
[TCIMAIL No.174] Typical p-Type Organic Semiconductor Material "Pentacene"[Organic Transistor] Purification via sublimation and Comparison of FET performances: Pentacene
[Organic Transistor] Typical p-type material "pentacene”
[Organic Transistor] Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Pentacene
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