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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 2,6-Diphenylanthracene

D5152

2,6-Diphenylanthracene (purified by sublimation)
2,6-Diphenylanthracene
CAS RN: 95950-70-2
Product Number: D5152

Performance of 2,6-Diphenylanthracene [D5152]-based OFETs

Fabrication method and evaluation of vacuum-deposited [D5152]-based OFETs



Table.OFETs Characteristics of 2,6-Diphenylanthracene [D5152]-based OFETs

Entry Fabrication Method Device Configuration SAM Treatment Tsub (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub (°C)50 Polarityp μ (cm2 V−1 s−1)0.34 Vth (V)‒12 Ion/Ioff106

Figure. Transfer curves in the saturated region and output curves at different gate voltage
Figure. Transfer curves in the saturated region and output curves at different gate voltage

Experimental details

brication and evaluatio n of vacuum-deposited 2,6-Diphenylanthracene[D5152]

< Substrate >
  • Bare Si/SiO2 (thickness of SiO2200 nm)

< Vacuum Deposition >
  • Deposition rate of 2,6-Diphenylanthracene [D5152] 0.3 Å/s, (under a pressure of -10−4 Pa)
  • Substrate temperature during deposition: 50 °C
  • Deposition rate of Au: 1.0 Å/s, (under a pressure of∼10 ∼10−4 Pa)

< Device Configuration >
  • [n+-Si/SiO2 (200 nm) / 2,6-Diphenylanthracene [D5152](50 nm) / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation Condition >
  • Under N2
  • Field-effect mobilities (μ)) were determined from the transfer curves in the saturation regime using the following equation:
    ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

D5152 2,6-Diphenylanthracene (purified by sublimation)

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