Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 8T

Fabrication and evaluation of vacuum-deposited 8T [O0313]-based OFETs

< Substrate >

• Bare Si/SiO₂ (thickness of SiO₂: 200 nm)

< Vacuum Deposition >

• Deposition rate of 8T [O0313] 0.4 Å/s (under a pressure of∼10⁻⁴ Pa)
• Substrate temperature during deposition: RT
• Deposition rate of Au: 1.2 Å/s (under a pressure of∼10⁻⁴ Pa)

< Device Configuration >

• [n⁺-Si/SiO₂ (200 nm) / 8T [O0313] (80 nm) / Au (40 nm)]
• Top-Contact Bottom-Gate Type (TCBG)
• Channel Length: 50 μm
• Channel width: 1.5 mm

< Evaluation Condition >

• Under N₂
• Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
  I_D = (W/2L) μ Ci (V_G − V_th)²