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High Performance n-Type Organic Semiconductor: TU

TU-1 [T3922] and TU-3 [T3924] are n-type organic semiconducting materials which possess excellent electron transport properties. TU-1 and TU-3 can be used for dry- and/or wet-processed organic field effect transistor devices (OFETs). These materials were developed by Prof. Tokito’s group. They also demonstrated high performance complementary circuits by combining with p-type organic semiconductors.

TCI has commercialized TU-1 and TU-3 as high performance n-type OFET materials, and has begun fabrication and evaluation of TU-1- or TU-3-based OFETs by vacuum deposition or spin coating method in our laboratories. Both TU-1 and TU-3-based devices show electron carrier mobilities up to 1 cm2/Vs. Please see below for more details.

Products

Advantages

• Electron mobility >1 cm2/Vs
• Applicable to dry and/or wet processes

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Performance evaluation of TU-1 and TU-3

TU-1 [T3922]-based device
(fabricated by vacuum deposition method)

TU-1 [T3922]-based device fabrication

TU-1 [T3922]-based device performance


TU-3 [T3924]-based device
(fabricated by spin coating method)

TU-3 [T3924]-based device fabrication

 

TU-3 [T3924]-based device performance

TCI has evaluated and ensured semiconductor performance of OFET devices using our in-house equipment.

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Fabrication procedures

A fabrication procedure for TU-1 [T3922]-based device

  1. ODTS [T3815] SAM layer was formed on n+-Si / SiO2 (200 nm) substrate.
  2. Vacuum deposition of TU-1 [T3922] (substrate temperature: 60ºC, deposition rate: 0.1 Å/sec, film thickness: 40 nm).
  3. Vacuum deposition of Au electrode (thickness: 40 nm, channel length: 50 μm, channel width 1.5 mm).
  4. Annealing treatment at 150 ºC for 30 min in nitrogen glove box.
  5. Device performance evaluation in nitrogen glove box.

A fabrication procedure for TU-3 [T3924]-based device

  1. A cross-linked poly vinyl phenol insulator was formed on n+-Si / SiO2 (200 nm) substrate.
  2. TU-3 [T3924] was dissolved in chloroform at a concentration of 0.1wt%.
  3. Spin-cast of TU-3 in nitrogen glove box (rotation speed: 1000 RPM, film thickness 20 nm).
  4. Annealing treatment at 180 ºC for 30 min in nitrogen glove box.
  5. Vacuum deposition of Au electrode (thickness: 40 nm, channel length: 50 μm, channel width 1.5 mm).
  6. Device performance evaluation in nitrogen glove box.

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Quality assurance by OFET mobility

OFET characteristics of the TU-1, TU-3-based devices

TU-1 and TU-3 have product specifications for the electron mobilities (>0.50 cm2/Vs) on OFET devices.

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References

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TU-1 and TU-3 are commercialized with the cooperation and help from Future Ink Corporation.