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Pentacene (99.999%, trace metals basis) (purified by sublimation)
(CAS RN:135-48-8 Product Number:P2524)



General Information

Product Number P2524

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Purity/Analysis Method
Storage Temperature
M.F. / M.W. C22H14=278.35
CAS RN 135-48-8
Related CAS RN
MDL Number MFCD00003710
Packaging and Container


This product is a substitute of Pentacene (purified by sublimation) (Product Number:P0030).
For more information, please refer to the FET evaluation page, the tab [application] below, or a leaflet.

We have demonstrated the fabrication and evaluation of OFET devices by using "Pentacene" (Product Number:P2524) sublimed grade. The device showed good performance with a hole carrier mobility of "μFET: >0.35 cm2/Vs (bare Si/SiO2 substrate)".
<< Device configuration and evaluation method >>
· Device configuration: top-contact type
  [Sin++ / SiO2 (200 nm) / P2524 (60 nm) / Au (60 nm)]
· Substrate treatment (Self-Assembled Monolayer): none
· Device fabrication: vacuum vapor deposition method
  (Channel L = 50 μm , W = 1.5 mm)
· Evaluation condition: nitrogen atmosphere
· Mobility(μFET): calculated from the transfer curves in the saturation regime using the following equation
  ID = (WCi /2L)μFET(VG - VTh)2

The difference between P2524 and P0030 is the following.
Product Number P2524 (This product): Pentacene (99.999%, trace metals basis) (purified by sublimation)
Total Metals Impuritiesmax. 10.0 ppm
Electron Mobility(μFET)min. 0.35 cm2/Vs (bare Si/SiO2 substrate)

Product Number P0030 : Pentacene (purified by sublimation)
TOF-MSto pass test
  • Product Details
  • Safety & Regulations


Total Metals Impurities max. 10.0 ppm
Hole Mobility(mu FET) min. 0.35 cm2/Vs(bare Si/SiO2 substrate)

Data of Reference

λmax 577(Toluene)(lit.)


Beilstein 5(3)2551
Reaxys-RN 1912418
PubChem SID 354334289
Merck Index(14) 7107
EC Number 205-193-7

Transport Information

HS Number 2902900000


Organic Field-Effect Transistor (OFET)

The FET performance was significantly improved by Self-Assembled Monolayer (n-Octyltrichlorosilane (OTS)[O0168]); the OTS-treated device demonstrated the highest performance with a hole carrier mobility of 1.52 cm2/Vs and an on/off ratio of 1.5 ×107 (Figure 1).

In the bare device (without SAM), two weak peaks assignable to face-on orientation were observed (Figure 3b, black arrow), which would create the disadvantage of carrier passes parallel to the substrate (Figure 4a). On the other hand, such peaks were not observed in the pentacene film on the OTS-treated substrate (Figure 3b). It is one reason why the mobility was higher in the OTS-treated OFET device.

A part of X-ray diffraction (XRD: Smart Lab) was conducted at Advanced Characterization Nanotechnology Platform of the University of Tokyo, supported by "Nanotechnology Platform" of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

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