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2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene
(CAS RN:1398395-83-9 Numéro de Produit:D5491)

Structure

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2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene
Synonyme 2-Decyl-7-phenylbenzo[b]benzo[4,5]thieno[2,3-d]thiophene
Synonyme Ph-BTBT-10
Synonyme Ph-BTBT-C10

Information générale

Numéro de Produit D5491

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Pureté/Méthode d'analyse >99.5%(HPLC)
Température de stockage
F.M. / M.M. C30H32S2=456.71
CAS RN 1398395-83-9
CAS RN concerné
Numéro MDL
Taille Unité

Remarques

For more information, please refer to the FET evaluation page, the tab [Application] below, or a leaflet.
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Spécification

Purity(HPLC) min. 99.5 area%
Hole Mobility(mu FET) min. 10.0 cm2/Vs(ODTS Si/SiO2 substrate)

Données de référence

mp 225°C(lit.)

Références

Reaxys-RN 28465162

Informations de transport

Code Marchandise 2934999090

Application

Organic Field-Effect Transistor (OFET)

The field-effect mobility of Ph-BTBT-10 was measured using the top-contact thin-film field-effect transistors geometry (Figure 1). The thin film of Ph-BTBT-10 as the active layer (40 nm) was vacuum-deposited onto Si/SiO2 substrate (bare) or ODTS (octadecyl trichlorosilane [O0079])-treated Si/SiO2 substrate while heating the substrate. The drain and source electrodes (40 nm) then were prepared by gold evaporation through a shadow mask on top of the Ph-BTBT-10 film; the drain-source channel length (L) and width (w) are 50 µm and 1.5 mm, respectively. After deposition, these devices are thermal annealed at Tsub = 120 °C for 5 min under the ambient conditions, and the characteristics of the OFET devices were measured.

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs
The performances of the OFET devices are summarized in Table 1 and Figure 2. All Ph-BTBT-10-based devices exhibited pure typical p-channel field-effect transistor (FET) characteristics. The FET mobilities were quite dependent on the thermal annealing treatment regardless of the self-assemble-monolayer (SAM) (Figure 2). This would be attributed to the phase transition from a monolayer to a bilayer crystal structure in the thin-film form.
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices
(a) w/o annealing (bare)  (b) annealing 120 °C, 5min (bare)
(c) w/o annealing (ODTS)  (d) annealing 120 °C, 5min (ODTS)


Table 1. OFET characteristics of the Ph-BTBT-10-based devices

Table 1. OFET characteristics of the Ph-BTBT-10-based devices

References

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