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Pentacene (99.999%, trace metals basis) (purified by sublimation)
(CAS RN:135-48-8 제품번호:P2524)

구조식

Pentacene

일반 정보

제품번호 P2524

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순도/분석 방법
보관 온도
M.F. / M.W. C22H14=278.35
CAS RN 135-48-8
관련 CAS RN
MDL 번호 MFCD00003710
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참고

This product is a substitute of Pentacene (purified by sublimation) (Product Number:P0030).
For more information, please refer to the FET evaluation page, the tab [application] below, or a leaflet.

We have demonstrated the fabrication and evaluation of OFET devices by using "Pentacene" (Product Number:P2524) sublimed grade. The device showed good performance with a hole carrier mobility of "μFET: >0.35 cm2/Vs (bare Si/SiO2 substrate)".
<< Device configuration and evaluation method >>
· Device configuration: top-contact type
  [Sin++ / SiO2 (200 nm) / P2524 (60 nm) / Au (60 nm)]
· Substrate treatment (Self-Assembled Monolayer): none
· Device fabrication: vacuum vapor deposition method
  (Channel L = 50 μm , W = 1.5 mm)
· Evaluation condition: nitrogen atmosphere
· Mobility(μFET): calculated from the transfer curves in the saturation regime using the following equation
  ID = (WCi /2L)μFET(VG - VTh)2
  • 제품 정보
  • 안전 및 규정
  • 참조

규격

Total Metals Impurities max. 10.0 ppm
Hole Mobility(mu FET) min. 0.35 cm2/Vs(bare Si/SiO2 substrate)

참조의 데이터

λmax 577(Toluene)(lit.)

참조

Beilstein 5(3)2551
Reaxys-RN 1912418
PubChem SID 354334289
Merck Index(14) 7107

이용 예

Organic Field-Effect Transistor (OFET)

The FET performance was significantly improved by Self-Assembled Monolayer (n-Octyltrichlorosilane (OTS)[O0168]); the OTS-treated device demonstrated the highest performance with a hole carrier mobility of 1.52 cm2/Vs and an on/off ratio of 1.5 ×107 (Figure 1).

In the bare device (without SAM), two weak peaks assignable to face-on orientation were observed (Figure 3b, black arrow), which would create the disadvantage of carrier passes parallel to the substrate (Figure 4a). On the other hand, such peaks were not observed in the pentacene film on the OTS-treated substrate (Figure 3b). It is one reason why the mobility was higher in the OTS-treated OFET device.

A part of X-ray diffraction (XRD: Smart Lab) was conducted at Advanced Characterization Nanotechnology Platform of the University of Tokyo, supported by "Nanotechnology Platform" of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

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