Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Naphthacene

Naphthacene [N1173]

Naphthacene [for organic electronics]
CAS RN: 92-24-0
Product Number: N1173

Fabrication method and evaluation of vacuum-deposited Naphthacene [N1173]

Table. OFETs Characteristics of Naphthacene [N1173]-based OFETs

Entry	Product Number	Fabrication Method	Device Configuration	SAM Treatment	T^sub (°C)	Polarity	μ (cm² V⁻¹ s⁻¹)	V_th (V)	I_on/I_off
Entry1	Product NumberN1173	Fabrication MethodVacuum Deposition	Device ConfigurationTCBG	SAM TreatmentBare	T^sub (°C)RT	Polarityp	μ(cm² V⁻¹ s⁻¹)2.01×10^-2	V_th (V)-12.0	I_on/I_off10⁵
Entry2	Product NumberN1173	Fabrication MethodDip-coating	Device ConfigurationTCBG	SAM TreatmentBare	T^sub (°C)RT	Polarityp	μ(cm² V⁻¹ s⁻¹)4.08×10^-2	V_th (V)-17.1	I_on/I_off10⁵

Figure. Transfer curves in the saturated region and output curves at different gate voltages

Fabrication and evaluation of Naphtacene [N1173]-based OFETs

< Substrate >

< Vacuum deposition >

Naphtacene [N1173]
Deposition rate: 1.0 Å/s
Thickness: 60 nm
Substrate temperature: RT (27°C)
Vacuum Pressure: ∼10⁻⁴ Pa
Au electrode
Deposition rate: 0.2 Å/s
Thickness: 40 nm
Substrate temperature: RT (27°C)
Vacuum Pressure: ∼10⁻⁵ Pa

< Dip-coating >

Naphtacene [N1173]
Solution concentration: 0.5 mg/ml Chloroform
Pulling rate: 5 μm/sec
Stage temperature: 30°C
Experiment atmosphere: N₂-filled glove box

< Device Configuration >

< Evaluation Condition >

Characteristics of OFET devices were measured in a nitrogen glove box after overnight storage.
Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
I_D = (W/2L) μ Ci (V_G − V_th)²