text.skipToContent text.skipToNavigation

Maximum quantity allowed is 999

请选择数量

CAS RN: 1398395-83-9 | 产品编码: D5491

2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene [for organic electronics]


纯度/分析方法: >99.5%(HPLC)
别名:
  • 2-癸基-7-苯基[1]苯并噻吩并[3,2-b][1]苯并噻吩 [用于有机电子]
  • 2-癸基-7-苯基苯并[b]苯并[4,5]噻吩并[2,3-d]噻吩
  • Ph-BTBT-C10
  • 2-Decyl-7-phenylbenzo[b]benzo[4,5]thieno[2,3-d]thiophene
  • Ph-BTBT-10
文档:
100MG
¥940.00
2   1   23  
250MG
¥1,945.00
2   1   ≥80 
1G
¥5,560.00

从天津仓库发货

1   1  
* 点击“查询”可查看预计发货日期,仅供参考。
* 无具体发货日期的情况,如:显示“8个工作日后发货”,将在您订购日起的8个工作日后发货。
* 我们将以最优方式从上海/天津两大仓库发货。国内库存不足,需两周左右向日本总部调货。
* 对于可分装产品,11:30前的订单,当天发货;11:30后的订单,隔天发货。
* 如需大包装,请点击“大包装询价”按钮(对于某些产品我们无法提供大包装)。
* TCI会经常复审储藏条件以对其进行优化,请以在线目录为准,敬请留意。
* 更多信息,请联系营业部:021-67121386 / Sales-CN@TCIchemicals.com 。任何货期、规格或包装方面的需求,请联系我们

Note:

[Solubility (Reference data)]
Toluene: 3.5 mmol/L
Anisole: 2.9 mmol/L
Chlorobenezene: 4.9 mmol/L

For more information, please refer to the FET evaluation page, the tab [Application] below, or a leaflet.

产品编码 D5491
纯度/分析方法 >99.5%(HPLC)
分子式/分子量 C__3__0H__3__2S__2 = 456.71 
外观与形状(20°C) 固体
应避免的情况
包装和容器 100MG-带有塑料内管的玻璃瓶 (查看图片),  1G-带有塑料内管的玻璃瓶 (查看图片),  250MG-带有塑料内管的玻璃瓶 (查看图片)
CAS RN 1398395-83-9
Reaxys-RN 28465162
PubChem物质ID 468591369
技术规格
Appearance White to Light yellow powder to crystal
Purity(HPLC) min. 99.5 area%
Hole Mobility(mu FET) min. 10.0 cm2/Vs(ODTS Si/SiO2 substrate)
物性(参考值)
熔点 225 °C
HOMO能级 -5.7 eV
GHS
相关法规
新化学物质备案回执号 B1A232215812
运输信息
监管条件代码(*)
应用
Organic Field-Effect Transistor (OFET)

Organic Field-Effect Transistor (OFET)

The field-effect mobility of Ph-BTBT-10 was measured using the top-contact thin-film field-effect transistors geometry (Figure 1). The thin film of Ph-BTBT-10 as the active layer (40 nm) was vacuum-deposited onto Si/SiO2 substrate (bare) or ODTS (octadecyl trichlorosilane [O0079])-treated Si/SiO2 substrate while heating the substrate. The drain and source electrodes (40 nm) then were prepared by gold evaporation through a shadow mask on top of the Ph-BTBT-10 film; the drain-source channel length (L) and width (w) are 50 µm and 1.5 mm, respectively. After deposition, these devices are thermal annealed at Tsub = 120 °C for 5 min under the ambient conditions, and the characteristics of the OFET devices were measured.

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs

Figure 1. Illustration for the device structure of Ph-BTBT-10-based OFETs
The performances of the OFET devices are summarized in Table 1 and Figure 2. All Ph-BTBT-10-based devices exhibited pure typical p-channel field-effect transistor (FET) characteristics. The FET mobilities were quite dependent on the thermal annealing treatment regardless of the self-assemble-monolayer (SAM) (Figure 2). This would be attributed to the phase transition from a monolayer to a bilayer crystal structure in the thin-film form.
The device fabricated on the bare substrate demonstrated good performance with a hole carrier mobility of 4.86 cm2/Vs and threshold voltage (Vth) of -8 V. Moreover, although Vth increased, the ODTS-treated devise showed the highest transport performance with a hole carrier mobility of 14.0 cm2/Vs. These results indicate that Ph-BTBT-10 can be handled through vacuum deposition methods, and it is a promising p-type OFET material possessing highly superior hole mobility. We demonstrated the top-ranked FET performances via vacuum deposition process using our in-house equipment.

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices

Figure 2. Transfer curves of the Ph-BTBT-10-based OFET devices
(a) w/o annealing (bare)  (b) annealing 120 °C, 5min (bare)
(c) w/o annealing (ODTS)  (d) annealing 120 °C, 5min (ODTS)


Table 1. OFET characteristics of the Ph-BTBT-10-based devices

Table 1. OFET characteristics of the Ph-BTBT-10-based devices

References


文档 (部分产品的分析图谱无法提供,敬请谅解。)
化学品安全说明书(SDS)
请选择语言。

如需更多帮助,请联系我 们。

技术规格
CoA及其他文档
请输入批号 批号输入有误。请输入中横线前的4-5个字母数字字符。
分析图谱
请输入批号 批号输入有误。请输入中横线前的4-5个字母数字字符。

很抱歉,您搜索的分析图谱无法提供。

其他文件

会话状态
当前会话将在10分钟后超时,并返回主页。请点击按钮继续浏览。分钟后超时,并返回主页。请点击按钮继续浏览。

您的会话已超时,将返回至主页。